Resonant coupling and negative differential resistance in metal/ferrocenyl alkanethiolate/STM structures
نویسندگان
چکیده
منابع مشابه
Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures
We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 a...
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Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility an...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2006
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.74.195430